BD140 TO-126 Transistor
KSH 10.00
In Stock
The BD140 is a mediumpower PNP bipolar junction transistor (BJT) housed in a TO126 (SOT32) plastic package[citation:1][citation:2]. Designed as a complementary device to the NPN transistor BD139[citation:5][citation:8], it is wellsuited for a variety of driver stages in hifi amplifiers, television circuits, and general-purpose power applications[citation:2][citation:3].
| Parameter | Value | Notes |
|---|---|---|
| :- | :- | :- |
| Collector-Base Voltage (VCBO) | -80V | [citation:1][citation:4][citation:6] |
| Collector-Emitter Voltage (VCEO) | -80V | Maximum continuous voltage[citation:1][citation:6] |
| Emitter-Base Voltage (VEBO) | -5V | [citation:1][citation:4][citation:6] |
| Collector Current (IC) | -1.5A | Continuous current rating[citation:1][citation:4] |
| Peak Collector Current (ICM) | -2A | Non-repetitive peak current[citation:1][citation:4] |
| Power Dissipation (Ptot) | 8W to 12.5W | Varies by manufacturer; depends on heatsinking[citation:6][citation:7][citation:8] |
| Power Dissipation (Ptot) | 1.25W | Without heatsink at 25°C ambient[citation:1][citation:9] |
| DC Current Gain (hFE) | 25 - 250 | Depends on variant and conditions[citation:6][citation:8] |
| Transition Frequency (fT) | 160 MHz | Typical value[citation:1][citation:4] |
| Operating/Storage Temperature | -65°C to +150°C | [citation:1][citation:4][citation:7] |
= Key Features =
Complementary PNP Design - Designed as a complementary transistor to the BD139 (NPN)[citation:5][citation:8]
High Current Capability 1.5A continuous collector current for mediumpower applications[citation:1][citation:7]
Low Saturation Voltage 0.5V maximum at IC = 500mA ensures low conduction losses[citation:1][citation:4]
Versatile Performance - 160 MHz transition frequency for suitability in audio and RF driver stages[citation:1][citation:4]
√ Ready to use A standard and welldocumented power transistor
√ Medium power capability - Suitable for a wide range of applications
Avoid exceeding the maximum voltage ratings the collectoremitter voltage (VCEO) of 80V is critical[citation:1][citation:6]
-Avoid exceeding the maximum junction temperature of 150°C[citation:1][citation:7]
-Avoid using this transistor as a direct replacement without confirming the pinout and specifications
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